MARC 主機 00000nam  2200325   4500 
001    AAI1480219 
005    20111020092027.5 
008    111020s2010    ||||||||||||||||| ||eng d 
020    9781124176994 
035    (UMI)AAI1480219 
040    UMI|cUMI 
100 1  Fenger, Germain L 
245 10 Development of plasma enhanced chemical vapor deposition 
       (PECVD) gate dielectrics for TFT applications 
300    101 p 
500    Source: Masters Abstracts International, Volume: 49-01, 
       page: 0572 
500    Adviser: Karl D. Hirschman 
502    Thesis (M.S.)--Rochester Institute of Technology, 2010 
520    This study investigated a variety of electrically 
       insulating materials for potential use as a gate 
       dielectric in thin-film transistor applications. The 
       materials that were investigated include silicon dioxide 
       and oxynitride films deposited using PECVD and LPCVD 
       techniques. Silicon source materials included 
       tetraethylorthosilicate (TEOS) and silane (SiH4). Oxygen 
       sources included diatomic oxygen (O2) and nitrous oxide (N
       2O). The optical, electrical, and material properties of 
       the dielectrics were analyzed using Variable Angle 
       Spectroscopic Ellipsometry (VASE), Fourier Transform 
       Infrared Spectroscopy (FTIR), Capacitance-Voltage (C-V) 
       analysis and current-voltage (I-V) analysis. Transistors 
       were also fabricated at low temperatures with different 
       gate dielectrics to investigate the impact on device 
       performance. While a deposited gate dielectric is 
       intrinsically inferior to a thermally grown SiO2 layer, an
       objective of this study was to create a high quality gate 
       dielectric with low levels of bulk and interface charge 
       (Qit & Qot∼1x1010 cm 2); this was achieved 
590    School code: 0465 
650  4 Engineering, Electronics and Electrical 
690    0544 
710 2  Rochester Institute of Technology.|bMicroelectronic 
773 0  |tMasters Abstracts International|g49-01 
856 40 |u