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作者 Vishnoi, Rajat
書名 Tunnel Field-Effect Transistors (TFET) : Modelling and Simulation
出版項 Chicester : John Wiley & Sons, Incorporated, 2016
©2016
國際標準書號 9781119246305 (electronic bk.)
9781119246299
book jacket
版本 1st ed
說明 1 online resource (208 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
附註 Intro -- Title Page -- Copyright -- Contents -- Preface -- Chapter 1 Quantum mechanics -- 1.1 Introduction to quantum mechanics -- 1.1.1 The double slit experiment -- 1.1.2 Basic concepts of quantum mechanics -- 1.1.3 Schrodingeŕs equation -- 1.2 Basic quantum physics problems -- 1.2.1 Free particle -- 1.2.2 Particle in a one-dimensional box -- Reference -- Chapter 2 Basics of tunnelling -- 2.1 Understanding tunnelling -- 2.1.1 Qualitative description -- 2.1.2 Rectangular barrier -- 2.2 WKB approximation -- 2.3 Landaueŕs tunnelling formula -- 2.4 Advanced tunnelling models -- 2.4.1 Non-local tunnelling models -- 2.4.2 Local tunnelling models -- References -- Chapter 3 The tunnel FET -- 3.1 Device structure -- 3.1.1 The need for tunnel FETs -- 3.1.2 Basic TFET structure -- 3.2 Qualitative behaviour -- 3.2.1 Band diagram -- 3.2.2 Device characteristics -- 3.2.3 Performance dependence on device parameters -- 3.3 Types of TFETs -- 3.3.1 Planar TFETs -- 3.3.2 Three-dimensional TFETs -- 3.3.3 Carbon nanotube and graphene TFETs -- 3.3.4 Point versus line tunnelling in TFETs -- 3.4 Other steep subthreshold transistors -- References -- Chapter 4 Drain current modelling of tunnel FET: the task and its challenges -- 4.1 Introduction -- 4.2 TFETmodelling approach -- 4.2.1 Finding the value of ψC -- 4.2.2 Modelling the surface potential in the source-channel junction -- 4.2.3 Finding the tunnelling current -- 4.3 MOSFETmodelling approach -- References -- Chapter 5 Modelling the surface potential in TFETs -- 5.1 The pseudo-2D method -- 5.1.1 Parabolic approximation of potential distribution -- 5.1.2 Solving the 2D Poisson equation using parabolic approximation -- 5.1.3 Solution for the surface potential -- 5.2 The variational approach -- 5.2.1 The variational form of Poissońs equation -- 5.2.2 Solution of the variational form of Poissońs equation in a TFET
5.3 The infinite series solution -- 5.3.1 Solving the 2D Poisson equation using separation of variables -- 5.3.2 Solution of the homogeneous boundary value problem -- 5.3.3 The solution to the 2D Poisson equation in a TFET -- 5.3.4 The infinite series solution to Poissońs equation in a TFET -- 5.4 Extension of surface potential models to differentTFETstructures -- 5.4.1 DG TFET -- 5.4.2 GAA TFET -- 5.4.3 Dual material gate TFET -- 5.5 The effect of localised charges on the surface potential -- 5.6 Surface potential in the depletion regions -- 5.7 Use of smoothing functions in the surface potential models -- References -- Chapter 6 Modelling the drain current -- 6.1 Non-local methods -- 6.1.1 Landaueŕs tunnelling formula in TFETs -- 6.1.2 WKB approximation in TFETs -- 6.1.3 Obtaining the drain current -- 6.2 Local methods -- 6.2.1 Numerical integration -- 6.2.2 Shortest tunnelling length -- 6.2.3 Constant polynomial term assumption -- 6.2.4 Tangent line approximation -- 6.3 Threshold voltage models -- 6.3.1 Constant current method -- 6.3.2 Constant tunnelling length -- 6.3.3 Transconductance change (TC) method -- References -- Chapter 7 Device simulation using ATLAS -- 7.1 Simulations using ATLAS -- 7.1.1 Inputs and outputs -- 7.1.2 Structure specification -- 7.1.3 Material parameters and model specification -- 7.1.4 Numerical method specification -- 7.1.5 Solution specification -- 7.2 Analysis of simulation results -- 7.3 SOI MOSFETexample -- Reference -- Chapter 8 Simulation of TFETs -- 8.1 SOI TFET -- 8.2 Other tunnelling models -- 8.2.1 Schenk band-to-band tunnelling model -- 8.2.2 Non-local band-to-band tunnelling -- 8.3 Gate all around nanowire TFET -- References -- Index -- EULA
Description based on publisher supplied metadata and other sources
Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2020. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries
鏈接 Print version: Vishnoi, Rajat Tunnel Field-Effect Transistors (TFET) : Modelling and Simulation Chicester : John Wiley & Sons, Incorporated,c2016 9781119246299
主題 Tunnel field-effect transistors
Electronic books
Alt Author Pandey, Pratyush
Mamidala, Jagadesh Kumar
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