作者 Kaushik, Brajesh Kumar, author
書名 Next generation spin torque memories / by Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni, Sanjay Prajapati
出版項 Singapore : Springer Singapore : Imprint: Springer, 2017
國際標準書號 9789811027208 (electronic bk.)
9789811027192 (paper)
國際標準號碼 10.1007/978-981-10-2720-8 doi
book jacket
說明 1 online resource (xvii, 92 pages) : illustrations, digital ; 24 cm
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
text file PDF rda
系列 SpringerBriefs in applied sciences and technology, 2191-530X
SpringerBriefs in applied sciences and technology
附註 Introduction to Magnetic Memories and Spin Transfer Torque -- Magnetic Tunnel Junctions (MTJs) -- STT MRAMs -- Hybrid MTJ-CMOS Digital Circuits -- Non-volatile Computing With STT MRAMs -- Spin Transfer Torque Based All Spin Logic (ASL) -- Non-volatile Computing With All Spin Information Processing -- References
This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality
Host Item Springer eBooks
主題 Spintronics
Nanotechnology
Microelectronics
Engineering
Nanotechnology and Microengineering
Electronics and Microelectronics, Instrumentation
Circuits and Systems
Alt Author Verma, Shivam, author
Kulkarni, Anant Aravind, author
Prajapati, Sanjay, author
SpringerLink (Online service)