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Author Tansu, Nelson
Title Novel quantum well gallium arsenide-based lasers for all transmission windows in optical communication
book jacket
Descript 291 p
Note Source: Dissertation Abstracts International, Volume: 64-08, Section: B, page: 3978
Supervisor: Luke J. Mawst
Thesis (Ph.D.)--The University of Wisconsin - Madison, 2003
The thesis covers the development of novel active regions for high-performance edge-emitting lasers (EEL) and vertical cavity surface-emitting lasers (VCSELs) in optical communication. Three main themes of the thesis cover the design, fabrication, and physics of the novel and alternative active regions for GaAs-based VCSELs for the three optical communications windows at wavelength regimes of 850-nm, 1300-nm, and 1500-nm, with the emphases on the 1300-nm InGaAsN QW GaAs-based active regions and on the novel design of 1500-nm GaAs-based active regions
The studies include the utilization of compressively-strained InGaAsP quantum well (QW) active regions for the 850-nm VCSELs. The research on the long-wavelength lasers covers the design, growth, temperature analysis, carrier transport, and gain analysis of the InGaAsN (lambda = 1.3 mum) quantum well lasers. The novel and original design of the GaAsSb-(In)GaAsN type-II QWs to achieve 1500--3000 nm GaAs-based active regions is discussed in detail
School code: 0262
DDC
Host Item Dissertation Abstracts International 64-08B
Subject Engineering, Electronics and Electrical
Physics, Optics
0544
0752
Alt Author The University of Wisconsin - Madison
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