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Author Kim, Jiseok
Title Band structure calculations of strained semiconductors using empirical pseudopotential theory
book jacket
Descript 170 p
Note Source: Dissertation Abstracts International, Volume: 72-05, Section: B, page: 2985
Adviser: Massimo V. Fischetti
Thesis (Ph.D.)--University of Massachusetts Amherst, 2011
Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D confined semiconductors are investigated using nonlocal empirical pseudopotential method with spin-orbit interaction. For the bulk semiconductors, local and nonlocal pseudopotential parameters are obtained by fitting transport-relevant quantities, such as band gap, effective masses and deformation potentials, to available experimental data. A cubic-spline interpolation is used to extend local form factors to arbitrary q and the resulting transferable local pseudopotential V(q) with correct work function is used to investigate the 1D and 2D confined systems with supercell method. Quantum confinement, uniaxial and biaxial strain and crystal orientation effects of the band structure are investigated. Regarding the transport relavant quantities, we have found that the largest ballistic electron conductance occurs for compressively-strained large-diameter [001] wires while the smallest transport electron effective mass is found for larger-diameter [110] wires under tensile stress
School code: 0118
Host Item Dissertation Abstracts International 72-05B
Subject Engineering, Electronics and Electrical
Physics, Quantum
Physics, General
0544
0599
0605
Alt Author University of Massachusetts Amherst. Electrical & Computer Engineering
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