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Author Fitzgerald, Benjamin M
Title Transistors : Types, Materials and Applications
Imprint Hauppauge : Nova Science Publishers, Incorporated, 2010
©2010
book jacket
Descript 1 online resource (210 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Series Electrical Engineering Developments
Electrical Engineering Developments
Note Intro -- TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS -- TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS -- CONTENTS -- PREFACE -- Chapter 1CARBON NANOMATERIAL TRANSISTORSAND CIRCUITS -- Abstract -- Introduction -- I. Carbon Nanomaterials -- A. Atomic Composition -- B. Physical Properties -- C. Electrical Properties -- II. Carbon Nanotube FETs (CNFETs) -- A. General -- B. Transistor Types -- III. Graphene Nanoribbon FETs (GNRFETs) -- IV. Modeling -- A. CNFET Modeling -- 1. SPICE Compatible MOSFET Models -- 2. SBFET Models -- B. GNRFET Modeling -- V. Logic Gates and Circuit Structures -- A. CNFET Logic Structures -- B. GNRFET Logic Structures -- C. Circuit Structures -- VI. Challenges and Opportunities -- VII. Conclusion -- Aknowledgment -- References -- Chapter 2ELECTRONIC PROPERTIES AND SELF CONSISTENTSIMULATIONS OF CARBON NANOTUBESIN TRANSISTOR TECHNOLOGY -- Abstract -- 1. Introduction -- 2. Physical Properties and Classification of Carbon Nanotubes -- 2.1. Properties of Graphene Structure -- 2.2. Properties of Carbon Nanotubes -- 2.3. Electron Wavefunctions in Carbon Nanotubes -- 3. Calculation of Electronic Properties of Carbon Nanotubes -- 3.1. Transmission Spectrum and Current Calculation of Nano-ScaledDevices Using Landauer's Formula -- 3.2. Non-equilibrium Green's Function Formalism for Realistic Calculationof Current-Voltage Relationships of Carbon Nanotubes -- 3.3. Density Functional Theory for the Calculation of the ElectronDensity-Potential Relationship in Carbon Nanotube Devices -- 3.4. DFT-NEGF Simulations of Example Nanotubes -- 3.4.1. Simulations of Semiconductor Nanotubes -- 3.4.2. Simulations of Metallic Nanotubes -- 4. Carbon Nanotube Field Effect Transistors, Review of TheirEquivalent Circuit Models and Experimental Applications -- 5. Conclusion -- References -- Chapter 3 NANOWIRE FIELD-EFFECT TRANSISTORS -- Abstract
1. Introduction -- 2. Brief Introduction to Nanowire Electronics -- 3. Typical 1-D Nanostructures -- 3.1. Nanorods -- 3.2. Nanowires -- 3.3. Nanotubes -- 3.4. Nanobelts -- 3.5. 1-D nanoscale Heterostructures -- 4. Application of Nanowire Transistors -- 4.1. Sensors -- 4.2. Light-Emitting Diodes and Nanolasers -- 4.3. Single Nanowire Solar Cells -- 4.4. Transparent Electronics -- 5. Conclusion -- Acknowledgments -- References -- Chapter 4OPERATING CHARACTERISTICS OF MOSFETSIN CHAOTIC OSCILLATORS -- Abstract -- Introduction -- Linear Operations -- Nonlinear Operators: PWL Functions -- Chaotic Oscillators Design: Chua's Circuit -- Chaotic Synchronization and Encryption -- Conclusion -- Acknowledgments -- References -- Chapter5ONTHEVARIATIONALINEQUALITIESAPPROACHTOSTUDYELECTRICALCIRCUITSWITHTRANSISTORS -- Abstract -- 1.Introduction -- 2.Set-valuedAmpere-VoltCharacteristics -- 2.1.DiodeModels -- 2.2.TransistorModels -- 3.MathematicalModellingApproach -- 4.Conclusion -- References -- Chapter 6 PHOTOCURRENT STUDY OF THE TRANSPORT MECHANISM IN MOLECULAR SELF-ASSEMBLING FIELD EFFECT TRANSISTORS -- Abstract -- Introduction -- 1. OFETs: Achievements vs. Problems -- 2. Analytical Tools to Study OFET Device Operation -- 3. Self-Assembly and SAM OFET Devices -- 4. NTCDI Thick Film and SAM OFETs -- 5. Transport in NTCDI SAM OFETs -- 6. The Scope of This Chapter -- Materials and Methods -- 1. Preparation of Organic Films -- Step-A -- Step-B -- 2. Characterization of the NTCDI Monolayer -- 3. SAM-OFET Electrode Configuration -- 4. Determination of the Absorption and External Quantum Efficiencies in Closed-Circuit SAM-PVCs -- 5. Time-Resolved Photovoltaic Measurements in Closed-Circuit SAM-PVCs -- 6. Capacitance Coupling (Open-Circiut) Measurements in SAM-PVC -- Results -- 1. NTCDI SAM OFET Devices -- 2. NTCDI SAM PVC Devices
2.1. Measurements of In-Plane Currents in SAM-PVC: Closed-Circuit Electrical Measurements -- 2.2. Measurement of Out-of-Plane Charge Recombination in SAM-PVC: Open-Circuit Electrical Measurements -- 2.2.1. Theoretical Background for the Capacitive Probe Measurements -- 2.2.2. Experimental Results -- 2.3. Reversing Conductivity Channel in SAM-PVC (Closed-Circuit Measurements) -- Discussion: Polaron Transport Mechanics -- Conclusion -- 1. Estimating Mobility in NTCDI SAM-OFETs -- 2. Alternative Pathways for Development of SAM-OFETs -- 3. Photocurrent Study as Tool to Elucidate a Transport Mechanism in 2D NTCDI-Based SAM-OFET -- Acknowledgments -- Review -- References -- Chapter 7ORGANIC FIELD-EFFECT TRANSISTORS:TETRATHIAFULVALENE DERIVATIVES AS HIGHLYPROMISING ORGANIC SEMICONDUCTORS -- 1. Device Configuration -- 2. Integration of the Organic Material in the Device -- 3. Organic Semiconductor -- OFETs Based on Tetrathiafulvalene (TTF) Derivatives -- References -- INDEX -- Blank Page
Description based on publisher supplied metadata and other sources
Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2020. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries
Link Print version: Fitzgerald, Benjamin M. Transistors: Types, Materials and Applications Hauppauge : Nova Science Publishers, Incorporated,c2010 9781616689087
Subject Transistors.;Semiconductors
Electronic books
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