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001    EBC4983707 
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005    20200713055450.0 
006    m     o  d |       
007    cr cnu|||||||| 
008    200713s2017    xx      o     ||||0 eng d 
020    9781119453406|q(electronic bk.) 
020    |z9781786301819 
035    (MiAaPQ)EBC4983707 
035    (Au-PeEL)EBL4983707 
035    (CaPaEBR)ebr11428614 
035    (OCoLC)1002698096 
040    MiAaPQ|beng|erda|epn|cMiAaPQ|dMiAaPQ 
050  4 TK7816.M874 2017 
082 0  621.381 
100 1  Muret, Pierre 
245 10 Fundamentals of Electronics 1 :|bElectronic Components and
       Elementary Functions 
264  1 Newark :|bJohn Wiley & Sons, Incorporated,|c2017 
264  4 |c©2018 
300    1 online resource (215 pages) 
336    text|btxt|2rdacontent 
337    computer|bc|2rdamedia 
338    online resource|bcr|2rdacarrier 
505 0  Cover -- Half-Title Page -- Title Page -- Copyright Page -
       - Contents -- Preface -- Outline -- Introduction -- 1. 
       Diodes and Applications -- 1.1. Semiconductor physics and 
       current transport in pn diodes -- 1.1.1. Energy and 
       concentration of mobile charge carriers (electrons and 
       holes) -- 1.1.2. Conduction mechanisms -- 1.2. Simplified 
       models of the pn diode -- 1.3. Diode circuitry (reviewed 
       in exercises) -- 1.4. Detailed model of pn diode: variable
       conditions and effect of temperature -- 1.4.1. Junction at
       equilibrium (at zero voltage or in open circuit): 
       diffusion potential -- 1.4.2. Biased junction (or out of 
       equilibrium): effect of an external potential difference -
       - 1.4.3. Effects of temperature -- 1.4.4. Capacitive 
       effects -- 1.5. Different types of diode and their 
       functions -- 1.5.1. Zener diode -- 1.5.2. Schottky diode 
       or metal-semiconductor diode -- 1.5.3. Light emitting 
       diodes and laser diodes -- 1.5.4. Photodiodes and 
       photovoltaic generators -- 1.6. Exercises -- 1.6.1. 
       Analyze the operation of the following circuits for a 
       sinusoidal voltage generator and ideal diodes (a) with no 
       threshold and (b) with a threshold U0 -- 1.6.2. Study of 
       the current variations in a forward biased pn diode under 
       influence of temperature -- 1.6.3. Analog switch -- 1.6.4.
       Ring modulator -- 1.6.5. Switching diode: study on opening
       -- 2. Bipolar Junction Transistors and Applications -- 
       2.1. The transistor effect -- 2.2. Bipolar junction 
       transistor (or BJT) models and types -- 2.2.1. Ebers-Moll 
       model -- 2.2.2. The heterojunction bipolar transistor (or 
       HBT) and transistors based on III-V semiconductors -- 2.3.
       Bipolar junction transistor in static regimes and 
       applications of the exponential characteristic IC(VBE) -- 
       2.3.1. Equivalent circuits for the three operating regimes
       -- 2.3.2. Nonlinear applications: differential pairs and 
       multiplier 
505 8  2.3.3. Circuits for transistor bias: current sources and 
       current mirrors -- 2.3.4. Voltage limitations -- 2.4. 
       Small-signal dynamic circuits (linear approximation) -- 
       2.4.1. Basic circuits -- 2.4.2. Small-signal high-
       frequency equivalent circuit -- 2.5. Power amplification: 
       classes of amplification -- 2.6. Bipolar transistor 
       switching on resistive loads -- 2.7. Components based on 
       the pnpn structure -- 2.7.1. pnpn diode (or Shockley 
       diode) -- 2.7.2. Controlled rectifier or thyristor -- 
       2.7.3. Diacs and triacs -- 2.8. Phototransistors and 
       optically controlled components -- 2.9. Exercises -- 
       2.9.1. Class A amplification -- 2.9.2. 4 Quadrant 
       multiplier -- 2.9.3. Amplifiers with rest current zero or 
       low relative to nominal current -- 2.9.4. Cascode circuit 
       and frequency responses of transistor amplifiers -- 3. 
       Field Effect Transistors and Applications -- 3.1. 
       Operating principle of junction field effect transistors 
       (JFET and MESFET types) -- 3.2. Metal oxide semiconductor 
       field effect transistors -- 3.3. Types of field effect 
       transistors and equivalent circuits -- 3.3.1. JFETs, 
       MESFETs and MOSFETs -- 3.3.2. Other field effect 
       transistors -- 3.4. Applications of field effect 
       transistors -- 3.4.1. Source of current and JFET biasing -
       - 3.4.2. Amplifiers and mixers -- 3.4.3. Variable 
       resistance controlled by the gate-source voltage and JFET 
       analog switch -- 3.4.4. Switching circuits and CMOS 
       elementary logic gates (with complementary MOSFET) -- 
       3.4.5. Combinatorial logic functions -- 3.4.6. Sequential 
       logic functions -- 3.5. Exercises -- 3.5.1. Parabolic 
       approximation of the JFET characteristic ID(VGS) in 
       pinched-off (or saturated) regime -- 3.5.2. JFET analog 
       switch -- input-output insulation in off-state -- 3.5.3. 
       MOSFET circuits -- 4. Amplifiers, Comparators and Other 
       Analog Circuits -- 4.1. Operational amplifiers, operating 
       principle and types 
505 8  4.1.1. Standard operational amplifiers -- 4.1.2. 
       Operational amplifiers with specific properties -- 4.2. 
       Operational amplifier models and responses -- 4.2.1. 
       Static model of voltage amplifier -- 4.2.2. Dynamic and 
       switched mode operations -- 4.3. Comparators -- 4.4. Noise
       in amplifiers -- 4.4.1. Noise nature and evaluation -- 
       4.4.2. Various types of noise and their origin -- 4.4.3. 
       Equivalent circuit of noise sources in amplifiers and 
       noise figure -- 4.4.4. Low-noise amplifiers -- 4.5. Analog
       integrated circuits -- 4.6. Exercises -- 4.6.1. Responses 
       of operational amplifier differential stage -- 4.6.2. 
       Generation of triangle and square wave signals: voltage to
       frequency conversion -- 4.6.3. Noise figure of an 
       operational amplifier circuit -- Appendix: Electrical 
       Circuits -- A.1. Laws of electrokinetics for linear 
       passive elements -- A.2. Definition of passive elements --
       A.3. Ideal sources -- A.3.1. Voltage sources -- A.3.2. 
       Current sources -- A.4. Conservation laws -- A.4.1. 
       Voltage law in close and open loops -- A.4.2. Current law 
       at a node -- A.5. Number of state variables and 
       independent equations in an isolated network -- A.6. 
       Useful theorems -- A.7. Circuits in non-steady state -- 
       A.8. Example of sinusoidal regime in an RLC circuit -- 
       A.9. Conclusion -- Bibliography -- Index -- Other titles 
       from iSTE in Electronics Engineering -- EULA 
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776 08 |iPrint version:|aMuret, Pierre|tFundamentals of 
       Electronics 1 : Electronic Components and Elementary 
       Functions|dNewark : John Wiley & Sons, Incorporated,c2017
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