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008 200713s2017 xx o ||||0 eng d
020 9781119453406|q(electronic bk.)
020 |z9781786301819
035 (MiAaPQ)EBC4983707
035 (Au-PeEL)EBL4983707
035 (CaPaEBR)ebr11428614
035 (OCoLC)1002698096
040 MiAaPQ|beng|erda|epn|cMiAaPQ|dMiAaPQ
050 4 TK7816.M874 2017
082 0 621.381
100 1 Muret, Pierre
245 10 Fundamentals of Electronics 1 :|bElectronic Components and
Elementary Functions
264 1 Newark :|bJohn Wiley & Sons, Incorporated,|c2017
264 4 |c©2018
300 1 online resource (215 pages)
336 text|btxt|2rdacontent
337 computer|bc|2rdamedia
338 online resource|bcr|2rdacarrier
505 0 Cover -- Half-Title Page -- Title Page -- Copyright Page -
- Contents -- Preface -- Outline -- Introduction -- 1.
Diodes and Applications -- 1.1. Semiconductor physics and
current transport in pn diodes -- 1.1.1. Energy and
concentration of mobile charge carriers (electrons and
holes) -- 1.1.2. Conduction mechanisms -- 1.2. Simplified
models of the pn diode -- 1.3. Diode circuitry (reviewed
in exercises) -- 1.4. Detailed model of pn diode: variable
conditions and effect of temperature -- 1.4.1. Junction at
equilibrium (at zero voltage or in open circuit):
diffusion potential -- 1.4.2. Biased junction (or out of
equilibrium): effect of an external potential difference -
- 1.4.3. Effects of temperature -- 1.4.4. Capacitive
effects -- 1.5. Different types of diode and their
functions -- 1.5.1. Zener diode -- 1.5.2. Schottky diode
or metal-semiconductor diode -- 1.5.3. Light emitting
diodes and laser diodes -- 1.5.4. Photodiodes and
photovoltaic generators -- 1.6. Exercises -- 1.6.1.
Analyze the operation of the following circuits for a
sinusoidal voltage generator and ideal diodes (a) with no
threshold and (b) with a threshold U0 -- 1.6.2. Study of
the current variations in a forward biased pn diode under
influence of temperature -- 1.6.3. Analog switch -- 1.6.4.
Ring modulator -- 1.6.5. Switching diode: study on opening
-- 2. Bipolar Junction Transistors and Applications --
2.1. The transistor effect -- 2.2. Bipolar junction
transistor (or BJT) models and types -- 2.2.1. Ebers-Moll
model -- 2.2.2. The heterojunction bipolar transistor (or
HBT) and transistors based on III-V semiconductors -- 2.3.
Bipolar junction transistor in static regimes and
applications of the exponential characteristic IC(VBE) --
2.3.1. Equivalent circuits for the three operating regimes
-- 2.3.2. Nonlinear applications: differential pairs and
multiplier
505 8 2.3.3. Circuits for transistor bias: current sources and
current mirrors -- 2.3.4. Voltage limitations -- 2.4.
Small-signal dynamic circuits (linear approximation) --
2.4.1. Basic circuits -- 2.4.2. Small-signal high-
frequency equivalent circuit -- 2.5. Power amplification:
classes of amplification -- 2.6. Bipolar transistor
switching on resistive loads -- 2.7. Components based on
the pnpn structure -- 2.7.1. pnpn diode (or Shockley
diode) -- 2.7.2. Controlled rectifier or thyristor --
2.7.3. Diacs and triacs -- 2.8. Phototransistors and
optically controlled components -- 2.9. Exercises --
2.9.1. Class A amplification -- 2.9.2. 4 Quadrant
multiplier -- 2.9.3. Amplifiers with rest current zero or
low relative to nominal current -- 2.9.4. Cascode circuit
and frequency responses of transistor amplifiers -- 3.
Field Effect Transistors and Applications -- 3.1.
Operating principle of junction field effect transistors
(JFET and MESFET types) -- 3.2. Metal oxide semiconductor
field effect transistors -- 3.3. Types of field effect
transistors and equivalent circuits -- 3.3.1. JFETs,
MESFETs and MOSFETs -- 3.3.2. Other field effect
transistors -- 3.4. Applications of field effect
transistors -- 3.4.1. Source of current and JFET biasing -
- 3.4.2. Amplifiers and mixers -- 3.4.3. Variable
resistance controlled by the gate-source voltage and JFET
analog switch -- 3.4.4. Switching circuits and CMOS
elementary logic gates (with complementary MOSFET) --
3.4.5. Combinatorial logic functions -- 3.4.6. Sequential
logic functions -- 3.5. Exercises -- 3.5.1. Parabolic
approximation of the JFET characteristic ID(VGS) in
pinched-off (or saturated) regime -- 3.5.2. JFET analog
switch -- input-output insulation in off-state -- 3.5.3.
MOSFET circuits -- 4. Amplifiers, Comparators and Other
Analog Circuits -- 4.1. Operational amplifiers, operating
principle and types
505 8 4.1.1. Standard operational amplifiers -- 4.1.2.
Operational amplifiers with specific properties -- 4.2.
Operational amplifier models and responses -- 4.2.1.
Static model of voltage amplifier -- 4.2.2. Dynamic and
switched mode operations -- 4.3. Comparators -- 4.4. Noise
in amplifiers -- 4.4.1. Noise nature and evaluation --
4.4.2. Various types of noise and their origin -- 4.4.3.
Equivalent circuit of noise sources in amplifiers and
noise figure -- 4.4.4. Low-noise amplifiers -- 4.5. Analog
integrated circuits -- 4.6. Exercises -- 4.6.1. Responses
of operational amplifier differential stage -- 4.6.2.
Generation of triangle and square wave signals: voltage to
frequency conversion -- 4.6.3. Noise figure of an
operational amplifier circuit -- Appendix: Electrical
Circuits -- A.1. Laws of electrokinetics for linear
passive elements -- A.2. Definition of passive elements --
A.3. Ideal sources -- A.3.1. Voltage sources -- A.3.2.
Current sources -- A.4. Conservation laws -- A.4.1.
Voltage law in close and open loops -- A.4.2. Current law
at a node -- A.5. Number of state variables and
independent equations in an isolated network -- A.6.
Useful theorems -- A.7. Circuits in non-steady state --
A.8. Example of sinusoidal regime in an RLC circuit --
A.9. Conclusion -- Bibliography -- Index -- Other titles
from iSTE in Electronics Engineering -- EULA
588 Description based on publisher supplied metadata and other
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776 08 |iPrint version:|aMuret, Pierre|tFundamentals of
Electronics 1 : Electronic Components and Elementary
Functions|dNewark : John Wiley & Sons, Incorporated,c2017
|z9781786301819
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