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作者 Popescu, Paul Dan
書名 Spatially- and spectrally-resolved investigations of indium arsenide quantum dot structures
國際標準書號 0496614878
book jacket
說明 149 p
附註 Source: Dissertation Abstracts International, Volume: 64-11, Section: B, page: 5587
Chair: Kevin John Malloy
Thesis (Ph.D.)--The University of New Mexico, 2003
The dissertation describes research done on InAs semiconductor quantum dot (QD) structures using high spatial and spectral resolution techniques. Carrier migration in structure with QDs, the influence of anisotropy on carrier transport, carrier distribution among the available energy states, the temperature dependence of the carrier population in QDs, and the changes induced in the spectra by the atomic intermixing at the interfaces are investigated
A confocal microscope with sub-micrometer resolution is used to obtain spatially resolved measurements of the carrier migration in the plane of the QDs. The studied samples have the InAs QD layer grown inside a strained quantum well and experimental results with and without the presence of QDs are modeled describing carrier migration. With the help of a comprehensive theoretical model for interpreting the experimental data, temperature related characteristics of the InAs QD samples are found. Evidence for a barrier at the interface between the QD and the surrounding quantum well is presented
Finally a study of the influence of the growth and thermal annealing temperatures on the spectra of QD ensembles is presented. It is shown that fundamentally different behavior is observed correlated with different growth techniques for QDs
School code: 0142
Host Item Dissertation Abstracts International 64-11B
主題 Physics, Optics
Engineering, Electronics and Electrical
Alt Author The University of New Mexico
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