MARC 主機 00000nam  2200349   4500 
001    AAI3410248 
005    20110719084842.5 
008    110719s2010    ||||||||||||||||| ||eng d 
020    9781124008394 
035    (UMI)AAI3410248 
040    UMI|cUMI 
100 1  Proesel, Jonathan E 
245 10 Flash analog-to-digital converter design based on 
       statistical post-silicon calibration 
300    118 p 
500    Source: Dissertation Abstracts International, Volume: 71-
       05, Section: B, page: 3257 
500    Adviser: Lawrence T. Pileggi 
502    Thesis (Ph.D.)--Carnegie Mellon University, 2010 
520    High-speed (multi-GS/s), low- to mid-resolution (4- to 8-
       bit) analog-to-digital converters (ADCs) are required for 
       many applications, such as high-speed wireless and 
       wireline communications, digital oscilloscopes, and radar.
       The flash ADC architecture is commonly used to implement 
       ADCs for such applications. Flash ADCs consist of a large 
       bank of comparators operating in parallel and each 
       comparator must meet a strict input-offset specification. 
       To meet the input-offset specification with minimal power 
       and area overhead, comparator calibration techniques are 
520    This work proposes the application of a new digital 
       calibration technique, statistical element selection 
       (SES). SES begins with a regular fabric of nominally 
       identical but randomly varying circuit elements, such as 
       individual devices (e.g., transistors) or multi-device 
       subcircuits (e.g., differential pairs). The fabric is 
       designed to be reconfigurable, allowing any subset of 
       elements to be connected in parallel. By intelligently 
       choosing a subset of elements to use, SES provides 
       exponential decrease in offset standard deviation with 
       respect to the total number of elements 
520    Monte Carlo simulation results demonstrate SES and provide
       guidance for design efforts. Yield is shown to improve 
       considerably faster than competing digital calibration 
       techniques (DAC-based calibration, redundancy, and 
       increased device sizing) 
520    Two SES-based comparator designs are implemented in 65nm 
       digital bulk CMOS. Silicon measurements verify the Monte 
       Carlo simulation results and demonstrate significant 
       improvements in offset standard deviation (14mV to 0.3mV) 
       and yield (10.9% to 99.6%) 
520    An 8-bit, 1.5GS/s flash ADC is implemented using the SES-
       based 65nm CMOS comparators. The performance is limited by
       comparator noise which degrades the effective number of 
       bits (ENOB) from 7.5 bits to 5.8 bits. The ADC achieves a 
       figure of merit (FoM) of 0.42pJ/conv, the best FoM 
       reported for 1+GS/s, 7+-bit ADCs and among the top 10 FoMs
       for flash ADCs published from 2007--2009. The flash ADC 
       measurement results demonstrate the efficiency and 
       efficacy of SES 
590    School code: 0041 
650  4 Engineering, Electronics and Electrical 
690    0544 
710 2  Carnegie Mellon University 
773 0  |tDissertation Abstracts International|g71-05B 
856 40 |u